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IXGH48N60A3

Trans IGBT Chip

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IXGH48N60A3 General Description

The IXGH48N60A3 is a high power insulated gate bipolar transistor (IGBT) designed for use in high power applications such as motor control, renewable energy systems, and industrial drives. It has a voltage rating of 600V and a maximum current rating of 48A, making it suitable for high power applications.The IXGH48N60A3 features a low VCE(sat) and low switching losses, allowing for efficient operation and reduced power dissipation. It also has a high thermal cycling capability, ensuring reliable performance in demanding applications.With a compact and lightweight design, the IXGH48N60A3 is easy to integrate into existing systems and offers a high level of performance and reliability. It features a short circuit rating of 20µs, making it suitable for applications where short circuit protection is required.

ixgh48n60a3 ixgh48n60a3

Key Features

  • 600V 48A IGBT
  • High power switching capability
  • Low on-state voltage
  • Low switching losses
  • High input impedance
  • Fast switching speed
  • Positive temperature coefficient
  • Enhanced diode ruggedness
  • RoHS compliant
  • TO-247 package
ixgh48n60a3 ixgh48n60a3

Application

  • High power switching applications
  • Power supplies
  • Industrial motor drives
  • Electric vehicles
  • Renewable energy systems
  • Welding equipment
  • Induction heating systems
  • Uninterruptible power supplies (UPS)
  • Solar inverters
  • Medical equipment
ixgh48n60a3 ixgh48n60a3

Specifications

Status Active VCES - Collector-Emitter Voltage (V) 600
VCE(sat) - Collector-Emitter Saturation Voltage (V) 1.35 Fall Time [Inductive Load] (ns) 224
Configuration Single Thermal resistance [junction-case] [IGBT] (K/W) 0.42
Turn-off Energy @ 125 ℃ (mJ) 5.6 Collector Current @ 110 ℃ (A) 48

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J
J**n 03/06/2020

nice, i recommend this product

5

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