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IXGH40N60C2D1

IGBT Transistors 75 Amps 600V 2.7 V Rds

email Email: [email protected]
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tel Tel: +852 95804164

IXGH40N60C2D1 General Description

IGBT PT 600 V 75 A 300 W Through Hole TO-247AD

Specifications

Mount Through Hole Number of Pins 3
Weight 6.500007 g Collector Emitter Breakdown Voltage 600 V
Collector Emitter Voltage (VCEO) 600 V Element Configuration Single
Max Collector Current 75 A Max Operating Temperature 150 °C
Max Power Dissipation 300 W Min Operating Temperature -55 °C
Reverse Recovery Time 25 ns Turn-Off Delay Time 90 ns
Turn-On Delay Time 18 ns Height 21.46 mm
Length 16.26 mm Width 5.3 mm

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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Z
Z**y 08/15/2022

Everything is ok. Thank you.

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