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See Technical Specifications

IXFN55N50

N-Channel 500 V 55A (Tc) 625W (Tc) Chassis Mount SOT-227B

Manufacturer:

IXYS
Mfr.Part #:

IXFN55N50
Datasheet:

IXFN55N50 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Pin Count:

4
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for IXFN55N50

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IXFN55N50 General Description

The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.

Key Features

International Standard Packages
High Current Handling Capability
Low R
DS(on)
HDMOS process
Avalanche Rated
Low Package Inductance
Fast intrinsic diode

Application

DC-DC converters
Battery chargers
Switched-mode and resonant-mode power supplies
DC choppers
AC Motor Drives
Temperature and Lighting Controls
Advantages:
Easy to mount
Space savings
High power density

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Obsolete
Pin Count	4	Reach Compliance Code	compliant
ECCN Code	EAR99	Additional Feature	AVALANCHE RATED
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	500 V	Drain Current-Max (ID)	55 A
Drain-source On Resistance-Max	0.09 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PUFM-X4	Number of Elements	1
Number of Terminals	4	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	600 W	Pulsed Drain Current-Max (IDM)	220 A
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Finish	NICKEL	Terminal Form	UNSPECIFIED
Terminal Position	UPPER	Transistor Application	SWITCHING
Transistor Element Material	SILICON