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IXFN150N65X2

N-Channel 650 V 145A (Tc) 1040W (Tc) Chassis Mount SOT-227B

IXFN150N65X2 General Description

Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness.In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI).

Key Features

  • Ultra low on-resistance R
  • DS(ON)
  • and gate charge Q
  • g
  • Fast body diode
  • dv/dt ruggedness
  • Avalanche rated
  • Low package inductance
  • International standard packages
  • Advantages:
  • Higher efficiency
  • High power density
  • Easy to mount
  • Space savings

Application

  • Industrial switched-mode and resonantmode power supplies
  • Electric vehicle battery chargers
  • AC and DC motor drives
  • DC-DC converters
  • Renewable-energy inverters
  • Power Factor Correction (PFC) circuits
  • Robotics and servo control

Specifications

Part Life Cycle Code Active Reach Compliance Code
ECCN Code EAR99

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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Availability: 6515 PCS

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