This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

IXFK180N10

N-Channel 100 V 180A (Tc) 560W (Tc) Through Hole TO-264AA (IXFK)

Manufacturer:

IXYS
Mfr.Part #:

IXFK180N10
Datasheet:

IXFK180N10 Datasheet (PDF)
Series:

HiPerFET™
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

100 V
EDA/CAD Models:

Request Free CAD Models for IXFK180N10

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IXFK180N10 General Description

The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.

Key Features

International Standard Packages
High Current Handling Capability
Low R
DS(on)
HDMOS process
Avalanche Rated
Low Package Inductance
Fast intrinsic diode

Application

DC-DC converters
Battery chargers
Switched-mode and resonant-mode power supplies
DC choppers
AC Motor Drives
Temperature and Lighting Controls
Advantages:
Easy to mount
Space savings
High power density

Specifications

Series	HiPerFET™	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	180A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	8mOhm @ 90A, 10V	Vgs(th) (Max) @ Id	4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	390 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	10900 pF @ 25 V	Power Dissipation (Max)	560W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Base Product Number	IXFK180