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IXFH15N100Q3

N-Channel 1000 V 15A (Tc) 690W (Tc) Through Hole TO-247AD (IXFH)

Manufacturer:

IXYS
Mfr.Part #:

IXFH15N100Q3
Datasheet:

IXFH15N100Q3 Datasheet (PDF)
Part Life Cycle Code:

Transferred
Pin Count:

3
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for IXFH15N100Q3

Email: [email protected]

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Tel: +852 95804164

IXFH15N100Q3 General Description

The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics,enhanced device ruggedness, and high energy efficiency.Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conductionand switching loss of the device.Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTMprocess, yielding a device with a fast intrinsic rectifier which provides for low reverserecovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device.

Key Features

Low Rds
on
per silicon area
Low Q
g
and Q
gd
Excellent dV/dt performance
High Speed Switching
Fast intrinsic Rectifier
Low Intrinsic Gate Resistance
High Avalanche Energy Capabilities
Excellent Thermal Performance

Application

Power Factor Correction
Battery chargers
Switched-mode and resonant-mode power supplies
Server and Telecom Power Systems
Arc Welding
Plasma Cutting
Induction Heating
Solar Generation Systems
Motor Controls
Advantages:
Easy to Mount
High Power Density
Space savings

Specifications

Part Life Cycle Code	Transferred	Pin Count	3
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Additional Feature	AVALANCHE RATED	Avalanche Energy Rating (Eas)	1000 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	1000 V	Drain Current-Max (ID)	15 A
Drain-source On Resistance-Max	1.05 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-247	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	690 W
Pulsed Drain Current-Max (IDM)	45 A	Surface Mount	NO
Terminal Finish	MATTE TIN	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	10
Transistor Application	SWITCHING	Transistor Element Material	SILICON