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IXEH40N120D1

IGBT Transistors 40 Amps 1200V

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IXEH40N120D1 General Description

IGBT NPT 1200 V 60 A 300 W Through Hole TO-247AD

Specifications

Category Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs Series -
IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 60 A Vce(on) (Max) @ Vge, Ic 3V @ 15V, 40A
Power - Max 300 W Switching Energy 6.1mJ (on), 3mJ (off)
Input Type Standard Gate Charge 150 nC
Td (on/off) @ 25°C - Test Condition 600V, 40A, 39Ohm, 15V
Reverse Recovery Time (trr) 180 ns Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Base Product Number IXEH40
Product Category: IGBT Transistors Technology: Si
Mounting Style: Through Hole Configuration: Single
Collector- Emitter Voltage VCEO Max: 1.2 kV Collector-Emitter Saturation Voltage: 2.4 V
Maximum Gate Emitter Voltage: - 20 V, + 20 V Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C Packaging: Tube
Continuous Collector Current: 60 A Continuous Collector Current Ic Max: 60 A
Height: 21.46 mm Length: 16.26 mm
Product Type: IGBT Transistors Factory Pack Quantity: 30
Subcategory: IGBTs Width: 5.3 mm
Unit Weight: 0.229281 oz

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