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See Technical Specifications

IXBH9N160G

IGBT 1600 V 9 A 100 W Through Hole TO-247AD

Manufacturer:

Littelfuse Inc
Mfr.Part #:

IXBH9N160G
Datasheet:

IXBH9N160G Datasheet (PDF)
feature-pin-count:

3
feature-cecc-qualified:

No
feature-military:

No
feature-aec-qualified:

No
EDA/CAD Models:

Request Free CAD Models for IXBH9N160G

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IXBH9N160G General Description

BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device.

Key Features

High blocking voltage
High power density
High current handling capability
Low conduction losses
MOS gate turn on for drive simplicity
International standard and proprietary ISOPLUS
TM
packages
Benefits:
Eliminates multiple series-parallel lower voltage, lower current rated
devices
Simpler system design
Improved reliability
Reduced component count
Reduced system cost

Application

Radar transmitter power supplies
Radar pulse modulators
Capacitor discharge circuits
High voltage power supplies
AC switches
HV circuit breakers
Pulser circuits
High voltage test equipment
Laser & X-ray generators

Specifications

feature-packaging		feature-rad-hard
feature-pin-count	3	feature-cecc-qualified	No
feature-esd-protection		feature-military	No
feature-aec-qualified	No	feature-aec-qualified-number
feature-auto-motive	No	feature-p-pap	No
feature-eccn-code	EAR99	feature-svhc	Yes
feature-svhc-exceeds-threshold	Yes