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IXBH42N170A +BOM

IGBT 1700 V 42 A 357 W Through Hole TO-247AD

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IXBH42N170A General Description

One key advantage of BiMOSFETs is their positive voltage temperature coefficient, which applies to both the saturation voltage and the forward voltage drop of their intrinsic diode. This characteristic not only enhances their performance but also simplifies the task of managing inductive load currents. By providing a "free" intrinsic body diode, BiMOSFETs offer valuable protection during device turn-off, effectively diverting potentially damaging high Ldi/dt voltage transients

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Key Features

  • High blocking voltage
  • High power density
  • High current handling capability
  • Low conduction losses
  • MOS gate turn on for drive simplicity
  • International standard and proprietary ISOPLUS
  • TM
  • packages
  • Benefits:
  • Eliminates multiple series-parallel lower voltage, lower current rated
  • devices
  • Simpler system design
  • Improved reliability
  • Reduced component count
  • Reduced system cost

Application

  • Radar transmitter power supplies
  • Radar pulse modulators
  • Capacitor discharge circuits
  • High voltage power supplies
  • AC switches
  • HV circuit breakers
  • Pulser circuits
  • High voltage test equipment
  • Laser & X-ray generators

Specifications

Pin Count 3 Released Date Apr 5, 2023
Last Modified Date Apr 5, 2023 9:21 AM UTC

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Packing

AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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Ratings and Reviews

More
I
I**c 02/26/2023

Delivery is not fast but on time. The quantity and nominal value corresponds to the description of the lot. The order is satisfied, you can take it.

19
J
J**h 01/12/2023

The order came goodly packed, the speakers arrived all damaged with dents.

4
R
R**K 04/06/2022

The screen works with a standard tft library. I started without problems.

16

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