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See Technical Specifications

IXBH42N170 +BOM

IGBT 1700 V 80 A 360 W Through Hole TO-247AD

Manufacturer:

Littelfuse Inc
Mfr.Part #:

IXBH42N170
Datasheet:

IXBH42N170 Datasheet (PDF)
Series:

BIMOSFET™
Voltage - Collector Emitter Breakdown (Max):

1700 V
Current - Collector (Ic) (Max):

80 A
Current - Collector Pulsed (Icm):

300 A
EDA/CAD Models:

Request Free CAD Models for IXBH42N170

Email: [email protected]

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Tel: +852 95804164

IXBH42N170 General Description

The IXBH42N170 BiMOSFETs offer a unique combination of MOSFET and IGBT strengths, making them highly efficient and versatile devices. With a non-epitaxial construction and advanced fabrication processes, these high voltage components have proven to be a remarkable success in the market. The positive voltage temperature coefficient of both the saturation voltage and the forward voltage drop of the intrinsic diode allows for seamless parallel operation, enhancing overall performance and reliability. Additionally, the built-in intrinsic body diode acts as a protective mechanism, offering an alternative pathway for inductive load current during device turn-off. This feature helps prevent high voltage transients and ensures the longevity of the device, making it a preferred choice for various applications requiring high voltage handling capabilities

Key Features

High blocking voltage
High power density
High current handling capability
Low conduction losses
MOS gate turn on for drive simplicity
International standard and proprietary ISOPLUS
TM
packages
Benefits:
Eliminates multiple series-parallel lower voltage, lower current rated
devices
Simpler system design
Improved reliability
Reduced component count
Reduced system cost

Application

Radar transmitter power supplies
Radar pulse modulators
Capacitor discharge circuits
High voltage power supplies
AC switches
HV circuit breakers
Pulser circuits
High voltage test equipment
Laser & X-ray generators

Specifications

Category	Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs	Series	BIMOSFET™
IGBT Type	-	Voltage - Collector Emitter Breakdown (Max)	1700 V
Current - Collector (Ic) (Max)	80 A	Current - Collector Pulsed (Icm)	300 A
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 42A	Power - Max	360 W
Switching Energy	-	Input Type	Standard
Gate Charge	188 nC	Td (on/off) @ 25°C	-
Test Condition	-	Reverse Recovery Time (trr)	1.32 µs
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Base Product Number	IXBH42