Payment Method
IXBH2N250
IGBT 2500 V 5 A 32 W Through Hole TO-247AD
-
Manufacturer:
-
Mfr.Part #:
IXBH2N250
-
Datasheet:
-
feature-pin-count:
3
-
feature-cecc-qualified:
No
-
feature-military:
No
-
feature-aec-qualified:
No
-
EDA/CAD Models:
Availability: 4663 PCS
Please fill in the short form below and we will provide you the quotation immediately.
IXBH2N250 General Description
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device.
Key Features
- "Free" intrinsic body diode
- High power density
- High frequency operation
- Low conduction losses
- MOS gate turn on for drive simplicity
- 4000V electrical isolation
- Advantages:
- Low gate drive requirements
- Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices)
- Easy to mount
Application
- Switched-mode and resonant-mode power supplies
- Uninterruptible Power Supplies (UPS)
- Laser and X-ray generators
- Capacitor discharge circuits
- High voltage pulser circuits
- High voltage test equipment
- AC switches
Specifications
feature-packaging | feature-rad-hard | ||
feature-pin-count | 3 | feature-cecc-qualified | No |
feature-esd-protection | feature-military | No | |
feature-aec-qualified | No | feature-aec-qualified-number | |
feature-eccn-code | EAR99 | feature-svhc | Yes |
feature-svhc-exceeds-threshold | Yes |
Service Policies and Others
After-Sales & Settlement Related
For alternative payment channels, please reach out to us at:
[email protected]Shipping Method
AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
365-Day Product
Quality Guarantee
We promise to provide 365 days quality assurance service for all our products.
Availability: 4663 PCS
+BOMQty. | Unit Price | Ext. Price |
---|---|---|
1+ | $12.914 | $12.91 |
10+ | $12.736 | $127.36 |
30+ | $12.426 | $372.78 |
90+ | $12.157 | $1,094.13 |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for IXBH2N250, guaranteed quotes back within 12hr.
Top Sellers
-
IXGH48N60C3D1
Littelfuse
100+ $5.861
-
IXTQ460P2
Littelfuse
900+ $1.936
-
IXGH60N60C2
Littelfuse
Restricted to OEMs and CMs, no third-party involvement
-
IXGR48N60C3D1
Littelfuse
IXGR48N60C3D1 by IXYS SEMICONDUCTOR is an Insulated Gate Bipolar Transistor (IGBT) with a current rating of 56 A
-
IXLF19N250A
Littelfuse Inc
IGBT Transistors High Voltage IGBT 2500V; 19A
The original and brand new MT40A512M16LY-062E AAT:E electronic components from Avaq are superb! Worked seamlessly in my project without any complications. Great purchase!