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IS42S16160D-6TLI

DRAM 256M (16Mx16) 166MHz SDR SDRAM, 3.3V

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IS42S16160D-6TLI General Description

SDRAM Memory IC 256Mbit Parallel 166 MHz 5.4 ns 54-TSOP II

Key Features

  • Clock frequency: 166, 143, 100 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Two banks can be operated simultaneously and independently
  • Dual internal bank controlled by A11 (bank select)
  • Single 3.3V power supply
  • LVTTL interface
  • Programmable burst length – (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto refresh, self refresh
  • 4096 refresh cycles every 128 ms
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command
  • Byte controlled by LDQM and UDQM
  • Package 400-mil 50-pin TSOP II

Specifications

Programmabe Not Verified Memory Type Volatile
Memory Format DRAM Technology SDRAM
Memory Size 256Mbit Memory Organization 16M x 16
Memory Interface Parallel Clock Frequency 166 MHz
Write Cycle Time - Word, Page - Access Time 5.4 ns
Voltage - Supply 3V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount

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