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See Technical Specifications

IRLR8726

Power Field-Effect Transistor, 86A I(D), 30V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK, 3 PIN

Manufacturer:

INFINEON
Mfr.Part #:

IRLR8726
Datasheet:

IRLR8726 Datasheet (PDF)
Part Life Cycle Code:

Transferred
Pin Count:

3
ECCN Code:

EAR99
Avalanche Energy Rating (Eas):

120 mJ

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IRLR8726 General Description

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Specifications

Part Life Cycle Code	Transferred	Pin Count	3
Reach Compliance Code		ECCN Code	EAR99
Avalanche Energy Rating (Eas)	120 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	30 V
Drain Current-Max (ID)	86 A	Drain-source On Resistance-Max	0.058 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-252AA
JESD-30 Code	R-PSSO-G2	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Polarity/Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	340 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Form	GULL WING
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON