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See Technical Specifications

IRLR7843TRPBF

MOSFET 30V 1 N-CH HEXFET 3.3mOhms 34nC

Manufacturer:

International Rectifier
Mfr.Part #:

IRLR7843TRPBF
Datasheet:

IRLR7843TRPBF Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Factory Lead Time:

53 Weeks, 1 Day
EDA/CAD Models:

Request Free CAD Models for IRLR7843TRPBF

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IRLR7843TRPBF General Description

Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

Specifications

Source Content uid	IRLR7843TRPBF	Part Life Cycle Code	Active
Reach Compliance Code	compliant	ECCN Code	EAR99
Factory Lead Time	53 Weeks, 1 Day	Avalanche Energy Rating (Eas)	1440 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	30 V	Drain Current-Max (ID)	30 A
Drain-source On Resistance-Max	0.0033 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-252AA	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	140 W	Pulsed Drain Current-Max (IDM)	620 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier	Terminal Form	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON