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IRLML5203TR +BOM

Power Field-Effect Transistor, 3A I(D), 30V, 0.098ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3

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IRLML5203TR General Description

Power Field-Effect Transistor, 3A I(D), 30V, 0.098ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3

Specifications

Part Life Cycle Code Obsolete Pin Count 3
Reach Compliance Code ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 3 A Drain-source On Resistance-Max 0.098 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PDSO-G3
JESD-609 Code e0 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Peak Reflow Temperature (Cel) 245
Polarity/Channel Type P-CHANNEL Power Dissipation-Max (Abs) 1.25 W
Pulsed Drain Current-Max (IDM) 24 A Qualification Status Not Qualified
Surface Mount YES Terminal Finish TIN LEAD
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON

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