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See Technical Specifications

IRLL014NPBF

N-Channel 55 V 2A (Ta) 1W (Ta) Surface Mount SOT-223

Manufacturer:

International Rectifier
Mfr.Part #:

IRLL014NPBF
Datasheet:

IRLL014NPBF Datasheet (PDF)
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Additional Feature:

AVALANCHE RATED
EDA/CAD Models:

Request Free CAD Models for IRLL014NPBF

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IRLL014NPBF General Description

Power Field-Effect Transistor, 2.8A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 4 PIN

Specifications

Source Content uid	IRLL014NPBF	Part Life Cycle Code	Obsolete
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Additional Feature	AVALANCHE RATED	Avalanche Energy Rating (Eas)	32 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	55 V	Drain Current-Max (ID)	2 A
Drain-source On Resistance-Max	0.14 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	30 pF	JEDEC-95 Code	TO-261AA
JESD-30 Code	R-PDSO-G4	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	4
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	2.1 W
Pulsed Drain Current-Max (IDM)	16 A	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON