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See Technical Specifications

IRLL014N

Trans MOSFET N-CH Si 55V 2.8A 4-Pin(3+Tab) SOT-223 T/R

Manufacturer:

Infineon Technologies
Mfr.Part #:

IRLL014N
Datasheet:

IRLL014N Datasheet (PDF)
Series:

HEXFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

55 V
EDA/CAD Models:

Request Free CAD Models for IRLL014N

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IRLL014N General Description

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Specifications

Series	HEXFET®	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)	Rds On (Max) @ Id, Vgs	140mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	230 pF @ 25 V	Mounting Type	Surface Mount
Base Product Number	IRLL014