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See Technical Specifications

IRG4PH40U-E

Transistor insulated gate bipolar transistor 4 power high 40 ultra-enhanced

Manufacturer:

Infineon
Mfr.Part #:

IRG4PH40U-E
Datasheet:

IRG4PH40U-E Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

1.2 kV
EDA/CAD Models:

Request Free CAD Models for IRG4PH40U-E

Email: [email protected]

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Tel: +852 95804164

Avaq Semiconductor offers the highly versatile and reliable IRG4PH40U-E driver, produced by Infineon. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the IRG4PH40U-E.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	1.2 kV	Maximum Gate Emitter Voltage	- 20 V, + 20 V
Continuous Collector Current at 25 C	41 A	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Height	20.7 mm
Length	15.87 mm	Product Type	IGBT Transistors
Subcategory	IGBTs	Width	5.31 mm