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See Technical Specifications

IRG4PC30S +BOM

IGBT Chip with 600V N-Channel Transistor

Manufacturer:

Infineon Technologies
Mfr.Part #:

IRG4PC30S
Datasheet:

IRG4PC30S Datasheet (PDF)
Packaging:

Bag
Voltage - Collector Emitter Breakdown (Max):

600 V
Current - Collector (Ic) (Max):

34 A
Current - Collector Pulsed (Icm):

68 A
EDA/CAD Models:

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IRG4PC30S General Description

The IRG4PC30S is an Insulated Gate Bipolar Transistor (IGBT) designed for high power applications. It has a maximum collector current of 43A and a maximum collector emitter voltage of 600V. This IGBT is optimized for use in motor control, induction heating, and power supply applications. It features a low saturation voltage, which helps to reduce power dissipation and improve efficiency. The IRG4PC30S also has a fast switching speed, which allows for high frequency operation and precise control of the load. This makes it suitable for applications where rapid switching is required, such as inverter drives and UPS systems.The device has a TO-247 package, which provides good thermal performance and high reliability. It also has a built-in free-wheeling diode, which helps to protect against reverse voltage spikes and improve overall performance.

Key Features

600V Vces rating
19A continuous current rating
Speed fast IGBT technology
Low conduction and switching losses
Positive Vces temperature coefficient
Ultrafast soft recovery diode
High input impedance with low input current

Application

Switch mode power supplies
Motor drives
Induction heating
Solar inverters
Welding equipment

Specifications

Packaging	Bag	Part Status	Obsolete
Voltage - Collector Emitter Breakdown (Max)	600 V	Current - Collector (Ic) (Max)	34 A
Current - Collector Pulsed (Icm)	68 A	Vce(on) (Max) @ Vge, Ic	1.6V @ 15V, 18A
Power - Max	100 W	Switching Energy	260µJ (on), 3.45mJ (off)
Input Type	Standard	Gate Charge	50 nC
Td (on/off) @ 25°C	22ns/540ns	Test Condition	480V, 18A, 23Ohm, 15V
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole