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IRG4IBC30W

IRG4IBC30W: A high-performance Trans IGBT Chip designed for power applications

IRG4IBC30W General Description

The IRG4IBC30W is a high efficiency, insulated gate bipolar transistor (IGBT) designed for high power switching applications. It is capable of handling high current and voltage levels, making it suitable for use in applications such as motor control, power supplies, and inverter systems.This IGBT has a maximum drain-source voltage of 600V and a maximum continuous collector current of 97A. With a low saturation voltage and fast switching speed, the IRG4IBC30W offers high performance while minimizing power losses.The device features a rugged design with a compact TO-220 package, making it easy to integrate into existing circuit designs. It also includes built-in protection features such as overcurrent and overtemperature protection, ensuring reliable operation in demanding environments.

irg4ibc30w irg4ibc30w

Key Features

  • 600 V IGBT with ultrafast soft recovery diode
  • Combines IR's most advanced IGBT with co-packaged ultrafast soft recovery diode
  • Low VCE(on) Trench IGBT technology
  • Max junction temperature of 175°C
  • Low switching losses for higher efficiency

Application

  • Motor controls
  • Switch mode power supplies
  • Induction heating
  • Welding equipment
  • Solar inverters
  • UPS systems
  • Induction cooktops
  • High-frequency ballasts
  • Lighting controls
  • Motor drives

Specifications

Packaging Tube Part Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 600 V Current - Collector (Ic) (Max) 17 A
Current - Collector Pulsed (Icm) 92 A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A
Power - Max 45 W Switching Energy 130µJ (on), 130µJ (off)
Input Type Standard Gate Charge 51 nC
Td (on/off) @ 25°C 25ns/99ns Test Condition 480V, 12A, 23Ohm, 15V
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Base Product Number IRG4IBC

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