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IRFS830B
N-Channel 500 V 4.5A (Tj) 38W (Tj) Through Hole TO-220F-3
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Manufacturer:
Fairchild Semiconductor
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Mfr.Part #:
IRFS830B
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Datasheet:
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
500 V
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Current - Continuous Drain (Id) @ 25°C:
4.5A (Tj)
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EDA/CAD Models:
Availability: 5375 PCS
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IRFS830B General Description
N-Channel 500 V 4.5A (Tj) 38W (Tj) Through Hole TO-220F-3
Key Features
- 4.5A, 500V, RDS(on)= 1.5Ω@VGS= 10 V
- Low gate charge ( typical 27 nC)
- Low Crss ( typical 17 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Specifications
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500 V | Current - Continuous Drain (Id) @ 25°C | 4.5A (Tj) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.25A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
Vgs (Max) | ±30V | Input Capacitance (Ciss) (Max) @ Vds | 1050 pF @ 25 V |
Power Dissipation (Max) | 38W (Tj) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
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Availability: 5375 PCS
+BOMQty. | Unit Price | Ext. Price |
---|---|---|
1+ | $0.280 | $0.28 |
200+ | $0.108 | $21.60 |
500+ | $0.104 | $52.00 |
1000+ | $0.102 | $102.00 |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for IRFS830B, guaranteed quotes back within 12hr.