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IRF830APBF

N-Channel 500 V 5A (Tc) 74W (Tc) Through Hole TO-220AB

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N-Channel 500 V 5A (Tc) 74W (Tc) Through Hole TO-220AB

Low gate charge Qg results in simple drive requirement

Improved gate, avalanche and dynamic dV/dt ruggedness

Fully characterized capacitance and avalanche voltage and current

Effective Coss specified

Switch Mode Power Supply (SMPS) |Uninterruptable Power Supply |High Speed power Switching

Pbfree Code	Yes	Part Life Cycle Code	Active
Pin Count	3	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	61 Weeks
Avalanche Energy Rating (Eas)	230 mJ	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	500 V	Drain Current-Max (ID)	5 A
Drain-source On Resistance-Max	1.4 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	4.3 pF	JEDEC-95 Code	TO-220AB
JESD-30 Code	R-PSFM-T3	JESD-609 Code	e3
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	74 W
Pulsed Drain Current-Max (IDM)	20 A	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Finish	MATTE TIN
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON