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See Technical Specifications

IRF6795MTRPBF

MOSFET 25V 1 N-CH HEXFET 1.8mOhms 35nC

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

IRF6795MTRPBF
Datasheet:

IRF6795MTRPBF Datasheet (PDF)
Series:

HEXFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

25 V
EDA/CAD Models:

Request Free CAD Models for IRF6795MTRPBF

Email: [email protected]

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Tel: +852 95804164

IRF6795MTRPBF General Description

N-Channel 25 V 32A (Ta), 160A (Tc) 2.8W (Ta), 75W (Tc) Surface Mount DIRECTFET™ MX

Infineon Technologies Corporation Inventory

Key Features

Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
High-current rating
Dual-side cooling capability
Low package height of 0.7mm
Low parasitic (1-2 nH) inductance package
100% lead-free (No RoHS exemption)
Wide availability from distribution partners
Industry standard qualification level
High current carrying capability
Optimum thermal performance
Compact form factor
High efficiency
Environmentally friendly

Infineon Technologies Corporation Original Stock

Application

LED
Motor control
Notebook

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	HEXFET®
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V	Current - Continuous Drain (Id) @ 25°C	32A (Ta), 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	1.8mOhm @ 32A, 10V
Vgs(th) (Max) @ Id	2.35V @ 100µA	Gate Charge (Qg) (Max) @ Vgs	53 nC @ 4.5 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	4280 pF @ 13 V
FET Feature	-	Power Dissipation (Max)	2.8W (Ta), 75W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	IRF6795	RHoS	yes
PBFree	yes	HalogenFree	yes
Product Category	MOSFET	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	25 V	Id - Continuous Drain Current	160 A
Rds On - Drain-Source Resistance	2.4 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1.8 V	Qg - Gate Charge	35 nC
Minimum Operating Temperature	- 40 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	2.8 W	Channel Mode	Enhancement
Tradename	DirectFET	Configuration	Single
Fall Time	11 ns	Forward Transconductance - Min	100 S
Height	0.7 mm	Length	6.35 mm
Product Type	MOSFET	Rise Time	27 ns
Factory Pack Quantity	4800	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	16 ns
Typical Turn-On Delay Time	16 ns	Width	5.05 mm
Unit Weight	0.017637 oz