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See Technical Specifications

IRF4905L

Power Field-Effect Transistor, 74A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN

Manufacturer:

INFINEON
Mfr.Part #:

IRF4905L
Datasheet:

IRF4905L Datasheet (PDF)
Part Life Cycle Code:

Transferred
Pin Count:

3
ECCN Code:

EAR99
Additional Feature:

HIGH RELIABILITY
EDA/CAD Models:

Request Free CAD Models for IRF4905L

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Tel: +852 95804164

IRF4905L General Description

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Specifications

Part Life Cycle Code	Transferred	Pin Count	3
Reach Compliance Code		ECCN Code	EAR99
Additional Feature	HIGH RELIABILITY	Avalanche Energy Rating (Eas)	930 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	55 V	Drain Current-Max (ID)	74 A
Drain-source On Resistance-Max	0.02 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-262AA	JESD-30 Code	R-PSIP-T3
JESD-609 Code	e0	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Polarity/Channel Type	P-CHANNEL
Power Dissipation-Max (Abs)	200 W	Pulsed Drain Current-Max (IDM)	260 A
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Finish	TIN LEAD	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON