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See Technical Specifications

IPW60R199CP

MOSFET N-Ch 650V 16A TO247-3 CoolMOS CP

Manufacturer:

INFINEON
Mfr.Part #:

IPW60R199CP
Datasheet:

IPW60R199CP Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Not Recommended
Pin Count:

3
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for IPW60R199CP

Email: [email protected]

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Tel: +852 95804164

IPW60R199CP General Description

Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3

Key Features

Lowest figure-of-merit RONxQg
Ultra low gate charge
Extreme dv/dt rated
High peak current capability
Qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant

Specifications

Source Content uid	IPW60R199CP	Pbfree Code	Yes
Part Life Cycle Code	Not Recommended	Pin Count	3
Reach Compliance Code	compliant	ECCN Code	EAR99
Avalanche Energy Rating (Eas)	436 mJ	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	600 V	Drain Current-Max (ID)	16 A
Drain-source On Resistance-Max	0.199 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-247	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	139 W
Pulsed Drain Current-Max (IDM)	51 A	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Finish	TIN
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Transistor Application	SWITCHING	Transistor Element Material	SILICON