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See Technical Specifications

IPW60R060P7

600V 48A 164W 60mΩ@10V,15.9A 4V@800uA N Channel TO-247-3 MOSFETs ROHS

Manufacturer:

Infineon
Mfr.Part #:

IPW60R060P7
Datasheet:

IPW60R060P7 Datasheet (PDF)
IDpuls max:

151.0 A
Mounting:

THT
Ptot max:

164.0 W
Polarity:

N
EDA/CAD Models:

Request Free CAD Models for IPW60R060P7

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IPW60R060P7 General Description

The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.Information on 600V CoolMOS™ P7 including target applications, topologies and key features.

Key Features

Suitable for hard and soft switching (PFC and LLC) due to an outstanding
commutation ruggedness
Significant reduction of switching and conduction losses
Excellent ESD robustness> 2kV(HBM) for all products
Better RDS(on)/package products compared to competition enabled by a
low RDS(on)A (below 1Ohmmm²)
Fully qualified acc. JEDEC for Industrial Applications

Specifications

IDpuls max	151.0 A	Mounting	THT
Ptot max	164.0 W	Polarity	N
RthJA max	62.0 K/W	RthJC max	0.76 K/W
VDS max	600.0 V	ID max	48.0 A
RDS (on) max	60.0 mΩ	Special Features	price/performance
VGS(th) max	4.0 V	VGS(th) min	3.0 V
Operating Temperature max	150.0 °C	Operating Temperature min	-55.0 °C