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IPW60R031CFD7XKSA1

MOSFET HIGH POWER_NEW

email Email: [email protected]
skype Skype: live:.cid.ab6b29428937b76
tel Tel: +852 95804164

IPW60R031CFD7XKSA1 General Description

N-Channel 650 V 63A (Tc) 278W (Tc) Through Hole PG-TO247-3

Application

SWITCHING

Specifications

Part Life Cycle Code Active Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 52 Weeks
Avalanche Energy Rating (Eas) 326 mJ Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V Drain Current-Max (ID) 63 A
Drain-source On Resistance-Max 0.031 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247 JESD-30 Code R-PSFM-T3
JESD-609 Code e3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Polarity/Channel Type N-CHANNEL Pulsed Drain Current-Max (IDM) 277 A
Surface Mount NO Terminal Finish TIN
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Application SWITCHING Transistor Element Material SILICON

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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