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IPW50R190CE +BOM

MOSFET N-Ch 500V 63A TO247-3

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IPW50R190CE General Description

N-Channel 500 V 18.5A (Tc) 127W (Tc) Through Hole PG-TO247-3-1

Key Features

  • Extremely low losses due to very low FOM Rdson^Qg and Eoss
  • Very high commutation ruggedness
  • Easy to use/drive
  • Pb-free plating, Halogen free mold compound
  • Qualified for industrial grade applications according to JEDEC (J-STD20
  • andJESD22)

Specifications

Series CoolMOS™ FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 18.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 13V
Rds On (Max) @ Id, Vgs 190mOhm @ 6.2A, 13V Vgs(th) (Max) @ Id 3.5V @ 510µA
Gate Charge (Qg) (Max) @ Vgs 47.2 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1137 pF @ 100 V Power Dissipation (Max) 127W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Base Product Number IPW50R

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In Stock: 7,954

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $0.966 $0.97
200+ $0.374 $74.80
500+ $0.362 $181.00
1000+ $0.355 $355.00

The prices below are for reference only.

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