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See Technical Specifications

IPP60R180C7

MOSFET HIGH POWER_NEW

Manufacturer:

INFINEON
Mfr.Part #:

IPP60R180C7
Datasheet:

IPP60R180C7 Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Avalanche Energy Rating (Eas):

53 mJ
EDA/CAD Models:

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IPP60R180C7 General Description

The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.

Key Features

Suitable for hard and soft switching(PFC and high performance LLC)
Increased MOSFET dv/dt ruggedness to 120V/ns
Increased efficiency due to best in class FOM RDS(on) Eoss and RDS(on)Qg
Best in class RDS(on)/package
Qualified for industrial grade applications according to JEDEC(J-STD20
and JESD22)

Specifications

Source Content uid	IPP60R180C7	Part Life Cycle Code	Active
Reach Compliance Code	compliant	ECCN Code	EAR99
Avalanche Energy Rating (Eas)	53 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	600 V
Drain Current-Max (ID)	13 A	Drain-source On Resistance-Max	0.18 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-220AB
JESD-30 Code	R-PSFM-T3	JESD-609 Code	e3
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Polarity/Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	45 A	Surface Mount	NO
Terminal Finish	TIN	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON	IDpuls max	45.0 A
Mounting	THT	Ptot max	68.0 W
Polarity	N	RthJA max	62.0 K/W
RthJC max	1.832 K/W	VDS max	600.0 V
ID max	13.0 A	RDS (on) max	180.0 mΩ
Special Features	highest performance	VGS(th) max	4.0 V
VGS(th) min	3.0 V	Operating Temperature max	150.0 °C
Operating Temperature min	-55.0 °C