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See Technical Specifications

IPD90P04P4L04ATMA1

Trans MOSFET P-CH 40V 90A Automotive 3-Pin(2+Tab) DPAK T/R

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

IPD90P04P4L04ATMA1
Datasheet:

IPD90P04P4L04ATMA1 Datasheet (PDF)
Series:

OptiMOS™
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

40 V
EDA/CAD Models:

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Email: [email protected]

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Tel: +852 95804164

IPD90P04P4L04ATMA1 General Description

Summary of Features: P-channel - Logic Level - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (RoHS compliant); 100% Avalanche tested | Benefits: No charge pump required for high side drive.; Simple interface drive circuit; World's lowest RDSon at 40V; Highest current capability; Lowest switching and conduction power losses for highest thermal efficiency; Robust packages with superior quality and reliability; Standard packages TO-252, TO-263, TO-220, TO-262 | Target Applications: High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors); Bridge configuration could be realized with 40V P-Channel as high side device with no need of charge pump

Key Features

P-channel - Logic Level - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (RoHS compliant)
100% Avalanche tested
No charge pump required for high side drive.
Simple interface drive circuit
World's lowest RDSon at 40V
Highest current capability
Lowest switching and conduction power losses for highest thermal efficiency
Robust packages with superior quality and reliability
Standard packages TO-252, TO-263, TO-220, TO-262

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	OptiMOS™
FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V	Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	4.3mOhm @ 90A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	176 nC @ 10 V
Vgs (Max)	±16V	Input Capacitance (Ciss) (Max) @ Vds	11570 pF @ 25 V
FET Feature	-	Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	IPD90	RHoS	yes
PBFree	yes	HalogenFree	yes
Product Category	MOSFET	Mounting Style	SMD/SMT
Transistor Polarity	P-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	40 V	Id - Continuous Drain Current	90 A
Rds On - Drain-Source Resistance	6.6 mOhms	Vgs - Gate-Source Voltage	- 16 V, + 5 V
Vgs th - Gate-Source Threshold Voltage	1.2 V	Qg - Gate Charge	135 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	125 W	Channel Mode	Enhancement
Qualification	AEC-Q101	Configuration	Single
Fall Time	60 ns	Height	2.3 mm
Length	6.5 mm	Product Type	MOSFET
Rise Time	20 ns	Factory Pack Quantity	2500
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	140 ns	Typical Turn-On Delay Time	20 ns
Width	6.22 mm	Part # Aliases	IPD90P04P4L-04 SP000840194
Unit Weight	0.011640 oz

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Ratings and Reviews

L**n 10/07/2023

I received m5218l instead of m5218al like promised. I don't know if they are roughly the same of exactly the same, but i expected a m5218al like in the title. I think the difference might be minor but nonetheless i think the supplier should update the title to be more accurate

N**s 01/13/2022

Received, checked, workers, corresponds, no claims.

D**n 01/22/2021

Product received, all OK. Not tested yet.