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IPD65R420CFD
N-Channel 650 V 8.7A (Tc) 83.3W (Tc) Surface Mount PG-TO252-3
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Manufacturer:
Infineon Technologies
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Mfr.Part #:
IPD65R420CFD
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Datasheet:
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Series:
CoolMOS™
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
650 V
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EDA/CAD Models:
Availability: 5756 PCS
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IPD65R420CFD General Description
N-Channel 650 V 8.7A (Tc) 83.3W (Tc) Surface Mount PG-TO252-3
Specifications
Series | CoolMOS™ | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 8.7A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 420mOhm @ 3.4A, 10V | Vgs(th) (Max) @ Id | 4.5V @ 340µA |
Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 100 V | Power Dissipation (Max) | 83.3W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | IPD65R |
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Availability: 5756 PCS
+BOMQty. | Unit Price | Ext. Price |
---|---|---|
1+ | $2.793 | $2.79 |
200+ | $1.081 | $216.20 |
500+ | $1.044 | $522.00 |
1000+ | $1.025 | $1,025.00 |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for IPD65R420CFD, guaranteed quotes back within 12hr.