Payment Method
IPD50P04P4-13
Trans MOSFET P-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK T/R
-
Manufacturer:
-
Mfr.Part #:
IPD50P04P4-13
-
Datasheet:
-
Pbfree Code:
Yes
-
Part Life Cycle Code:
Active
-
Pin Count:
4
-
Reach Compliance Code:
not_compliant
-
EDA/CAD Models:
Availability: 5706 PCS
Please fill in the short form below and we will provide you the quotation immediately.
IPD50P04P4-13 General Description
Power Field-Effect Transistor, 50A I(D), 40V, 0.0126ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
Key Features
- Reduced energy stored in output capacitance (Eoss)
- High body diode ruggedness
- Reduced reverse recovery charge (Qrr)
- Reduced gate charge (Qg)
- Overall Features
- BENEFITS
- Reduction of switching losses, improvement of light load efficiency
- Higher reliability under critical operating conditions
- Lower possibility of hard commutation in resonant topologies
- Improvement in light load efficiency
- Lower gate drive capability required
- Easy control of switching behavior
- Outstanding reliability with proven CoolMOSTM quality
Specifications
Source Content uid | IPD50P04P4-13 | Pbfree Code | Yes |
Part Life Cycle Code | Active | Pin Count | 4 |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Avalanche Energy Rating (Eas) | 18 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 40 V |
Drain Current-Max (ID) | 50 A | Drain-source On Resistance-Max | 0.0126 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-252 |
JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 2 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 175 °C | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | P-CHANNEL | Power Dissipation-Max (Abs) | 58 W |
Surface Mount | YES | Terminal Finish | TIN |
Terminal Form | GULL WING | Terminal Position | SINGLE |
Transistor Element Material | SILICON | Product Category | MOSFET |
Technology | Si | Mounting Style | SMD/SMT |
Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 40 V | Id - Continuous Drain Current | 50 A |
Rds On - Drain-Source Resistance | 12.6 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 39 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 58 W | Channel Mode | Enhancement |
Qualification | AEC-Q101 | Tradename | OptiMOS |
Series | OptiMOS-P2 | Fall Time | 28 ns |
Height | 2.3 mm | Length | 6.5 mm |
Product Type | MOSFET | Rise Time | 10 ns |
Factory Pack Quantity | 2500 | Subcategory | MOSFETs |
Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 22 ns |
Typical Turn-On Delay Time | 17 ns | Width | 6.22 mm |
Part # Aliases | IPD5P4P413XT SP000840204 IPD50P04P413ATMA1 | Unit Weight | 0.011640 oz |
Service Policies and Others
After-Sales & Settlement Related
For alternative payment channels, please reach out to us at:
[email protected]Shipping Method
AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
365-Day Product
Quality Guarantee
We promise to provide 365 days quality assurance service for all our products.
Availability: 5706 PCS
+BOMQty. | Unit Price | Ext. Price |
---|---|---|
1+ | $2.848 | $2.85 |
10+ | $2.577 | $25.77 |
30+ | $2.407 | $72.21 |
100+ | $2.066 | $206.60 |
500+ | $1.988 | $994.00 |
1000+ | $1.953 | $1,953.00 |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for IPD50P04P4-13, guaranteed quotes back within 12hr.