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IPD068P03L3G

Infineon IPD068P03L3G P-channel MOSFET Transistor, 70 A, -30 V, 3-Pin TO-252

Manufacturer:

INFINEON
Mfr.Part #:

IPD068P03L3G
Datasheet:

IPD068P03L3G Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

4
Reach Compliance Code:

not_compliant
EDA/CAD Models:

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IPD068P03L3G General Description

Power Field-Effect Transistor, 70A I(D), 30V, 0.0068ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3

Key Features

single P-Channel in DPAK
Qualified according JEDEC1) for target applications
175 °C operating temperature
100% Avalanche tested
Pb-free; RoHS compliant, halogen free
applications: power management
Halogen-free according to IEC61249-2-21

Specifications

Source Content uid	IPD068P03L3G	Pbfree Code	Yes
Part Life Cycle Code	Active	Pin Count	4
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Avalanche Energy Rating (Eas)	149 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	30 V
Drain Current-Max (ID)	70 A	Drain-source On Resistance-Max	0.0068 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-252
JESD-30 Code	R-PSSO-G2	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Polarity/Channel Type	P-CHANNEL	Power Dissipation-Max (Abs)	100 W
Pulsed Drain Current-Max (IDM)	280 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Form	GULL WING
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON