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See Technical Specifications

IPD042P03L3 G

MOSFET P-Ch -30V 70A DPAK-2 OptiMOS P3

Manufacturer:

INFINEON
Mfr.Part #:

IPD042P03L3 G
Datasheet:

IPD042P03L3 G Datasheet (PDF)
Source Content uid:

IPD042P03L3G
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

4
EDA/CAD Models:

Request Free CAD Models for IPD042P03L3 G

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IPD042P03L3 G General Description

Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

Specifications

Source Content uid	IPD042P03L3G	Pbfree Code	Yes
Part Life Cycle Code	Active	Pin Count	4
Reach Compliance Code	compliant	ECCN Code	EAR99
Additional Feature	LOGIC LEVEL COMPATIBLE	Avalanche Energy Rating (Eas)	269 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	30 V	Drain Current-Max (ID)	70 A
Drain-source On Resistance-Max	0.0068 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-252	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	P-CHANNEL
Power Dissipation-Max (Abs)	150 W	Pulsed Drain Current-Max (IDM)	280 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	GULL WING
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON