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IPBE65R075CFD7AATMA1 +BOM

MOSFET AUTOMOTIVE

IPBE65R075CFD7AATMA1 General Description

N-Channel 650 V 32A (Tc) 171W (Tc) Surface Mount PG-TO263-7-3-10

Infineon Technologies Corporation Inventory

Key Features

  • AEC-Q101 qualified
  • Battery voltages up to 475V without compromising on reliability standards
  • Efficiency improvements in hard- and soft-switching topologies up to 98.4%
  • Kelvin-source concept for further efficiency improvement
  • Intrinsic fast body diode with 30% lower Q
  • rr
  • Highest reliability in the field meeting automotive lifetime requirements
  • Enabling of higher power density designs
  • Scalable as designed for use in PFC and DC-DC stage
  • Granular portfolio available
Infineon Technologies Corporation Original Stock

Application

  • On-board chargers
  • Hard-switching topologies (with SiC diode)
  • PFC boost-stages
  • DC-DC stage of on-board chargers
  • HV-LV DC-DC converters
  • LLC or full-bridge phase shift (ZVS)
  • Auxiliary power supplies

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Series Automotive, AEC-Q101, CoolMOS™ CFD7A
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 75mOhm @ 16.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 820µA Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3288 pF @ 400 V
FET Feature - Power Dissipation (Max) 171W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount
Base Product Number IPBE65 RHoS yes
PBFree yes HalogenFree yes

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IPBE65R075CFD7AATMA1 Datasheet PDF

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In Stock: 5,130

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