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See Technical Specifications

IPB020N08N5 +BOM

MOSFET TRENCH 40<-<100V

Manufacturer:

INFINEON
Mfr.Part #:

IPB020N08N5
Datasheet:

IPB020N08N5 Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Avalanche Energy Rating (Eas):

674 mJ
EDA/CAD Models:

Request Free CAD Models for IPB020N08N5

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IPB020N08N5 General Description

Infineon’s OptiMOS™ 5 80V industrial power MOSFET IPB020N08N5 offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.

Specifications

Source Content uid	IPB020N08N5	Part Life Cycle Code	Active
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Avalanche Energy Rating (Eas)	674 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	80 V
Drain Current-Max (ID)	120 A	Drain-source On Resistance-Max	0.002 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-263AB
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Polarity/Channel Type	N-CHANNEL	Pulsed Drain Current-Max (IDM)	480 A
Surface Mount	YES	Terminal Finish	TIN
Terminal Form	GULL WING	Terminal Position	SINGLE
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Tradename	OptiMOS
Series	OptiMOS 5	Height	4.4 mm
Length	10 mm	Product Type	MOSFET
Subcategory	MOSFETs	Width	9.25 mm
Unit Weight	0.139332 oz