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IPAN60R360PFD7SXKSA1

MOSFET CONSUMER

email Email: [email protected]
skype Skype: live:.cid.ab6b29428937b76
tel Tel: +852 95804164

IPAN60R360PFD7SXKSA1 General Description

N-Channel 650 V 10A (Tc) 23W (Tc) Through Hole PG-TO220-FP

Infineon Technologies Corporation Inventory

Key Features

  • Very low FOM R
  • DS(on)
  • oss
  • Integrated robust fast body diode
  • Up to 2kV ESD protection
  • Wide range of R
  • DS(on)
  • values
  • Excellent commutation ruggedness
  • Low EMI
  • Broad package portfolio
  • Minimized switching losses
  • Power density improvement compared to latest CoolMOS charger technology
  • Increased efficiency and improved thermal behavior compared to CoolMOS CE technology for low power drives applications
  • BOM cost reduction and easy manufacturing
  • Robustness and reliability
  • Easy to select the right parts for design fine-tuning
Infineon Technologies Corporation Original Stock

Application

  • Consumer
  • High density Charger and Adapter
  • USB PD
  • Fridge
  • Fans
  • Pumps

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Series CoolMOS™PFD7
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 360mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 4.5V @ 140µA Gate Charge (Qg) (Max) @ Vgs 12.7 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 534 pF @ 400 V
FET Feature - Power Dissipation (Max) 23W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole
Base Product Number IPAN60 RHoS yes
PBFree yes HalogenFree yes

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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IPAN60R360PFD7SXKSA1 Datasheet PDF

Preliminary Specification IPAN60R360PFD7SXKSA1 PDF Download

IPAN60R360PFD7SXKSA1 PDF Preview

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