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See Technical Specifications

IPA60R380E6

MOSFET N-Ch 650V 10.6A TO220FP-3 CoolMOS E6

Manufacturer:

INFINEON
Mfr.Part #:

IPA60R380E6
Datasheet:

IPA60R380E6 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Not Recommended
Pin Count:

3
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for IPA60R380E6

Email: [email protected]

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Tel: +852 95804164

IPA60R380E6 General Description

N-Channel 600 V 10.6A (Tc) 31W (Tc) Through Hole PG-TO220-FP

Key Features

Extremely low losses due to very low FOM RdsonQg and Eoss
Very high commutation ruggedness
Easy to use/drive
JEDEC1) qualified, Pb-free plating, Halogen free
Qualified for industrial grade applications according to JEDEC (J-STD20
and JESD22)

Specifications

Source Content uid	IPA60R380E6	Pbfree Code	Yes
Part Life Cycle Code	Not Recommended	Pin Count	3
Reach Compliance Code	compliant	ECCN Code	EAR99
Factory Lead Time	52 Weeks	Avalanche Energy Rating (Eas)	210 mJ
Case Connection	ISOLATED	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	600 V	Drain Current-Max (ID)	10.6 A
Drain-source On Resistance-Max	0.38 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-220AB	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	31 W	Pulsed Drain Current-Max (IDM)	30 A
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Finish	TIN	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Product Category	MOSFET
Technology	Si	Mounting Style	Through Hole
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	600 V	Id - Continuous Drain Current	10.6 A
Rds On - Drain-Source Resistance	380 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	3.5 V	Qg - Gate Charge	32 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	31 W	Channel Mode	Enhancement
Tradename	CoolMOS	Series	CoolMOS E6
Fall Time	8 nS	Height	16.15 mm
Length	10.65 mm	Product Type	MOSFET
Rise Time	9 nS	Factory Pack Quantity	500
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	56 nS	Width	4.85 mm
Part # Aliases	SP000795300 IPA6R38E6XK IPA60R380E6XKSA1	Unit Weight	0.068784 oz