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IPA60R199CP +BOM

MOSFET N-Ch 600V 16A TO220FP-3 CoolMOS CP

IPA60R199CP General Description

N-Channel 650 V 16A (Tc) 34W (Tc) Through Hole PG-TO220-3-31

Key Features

  • Lowest figure-of-merit RONxQg
  • Ultra low gate charge
  • Extreme dv/dt rated
  • High peak current capability
  • Qualified according to JEDEC1) for target applications
  • Pb-free lead plating; RoHS compliant
  • CoolMOS CP is specially designed for:
  • Hard switching SMPS topologies

Specifications

Source Content uid IPA60R199CP Pbfree Code Yes
Part Life Cycle Code Not Recommended Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
Avalanche Energy Rating (Eas) 436 mJ Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 16 A Drain-source On Resistance-Max 0.199 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 34 W
Pulsed Drain Current-Max (IDM) 51 A Qualification Status Not Qualified
Surface Mount NO Terminal Finish TIN
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Application SWITCHING Transistor Element Material SILICON

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In Stock: 4,384

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $6.129 $6.13
200+ $2.372 $474.40
500+ $2.288 $1,144.00
1000+ $2.248 $2,248.00

The prices below are for reference only.