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IKZA50N65SS5XKSA1

IGBT Trench Field Stop 650 V 80 A 274 W Through Hole PG-TO247-4-3

IKZA50N65SS5XKSA1 General Description

IGBT Trench Field Stop 650 V 80 A 274 W Through Hole PG-TO247-4-3

Infineon Technologies Corporation Inventory

Key Features

  • Ultra-low switching losses due to the combination of TRENCHSTOP 5 and CoolSiC diode technology as well as the Kelvin emitter package
  • Very low on-state losses
  • Benchmark switching efficiency in hard switching topologies
  • Simplified PCB design due to the optimized pin-out of the four-pin package
  • Qualified according to JEDEC for target applications
  • Pb-free lead plating; RoHS compliant
  • Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22
  • Highest efficiency
  • Reduced cooling effort
  • Increased power density
  • Plug & play replacement of the pure silicon devices
  • Easy upgrade of existing designs for higher efficiency
  • Excellent for paralleling
Infineon Technologies Corporation Original Stock

Application

  • AC-DC power supplies
  • Solutions for photovoltaic energy systems
  • Uninterruptible Power Supplies (UPS)

Specifications

Category Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs Series TrenchStop™ 5
IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 80 A Current - Collector Pulsed (Icm) 200 A
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 50A Power - Max 274 W
Switching Energy 230µJ (on), 520µJ (off) Input Type Standard
Gate Charge 110 nC Td (on/off) @ 25°C 19ns/140ns
Test Condition 400V, 50A, 9Ohm, 15V Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Through Hole Base Product Number IKZA50
RHoS yes PBFree yes
HalogenFree yes

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