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IKP20N60H3XKSA1

IGBT Trench Field Stop 600 V 40 A 170 W Through Hole PG-TO220-3

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IGBT Trench Field Stop 600 V 40 A 170 W Through Hole PG-TO220-3

Low switching losses for high efficiency
Excellent V
ce(sat)
Fast switching behavior with low EMI emissions
Optimized diode for target applications, meaning further improvement in switching losses
Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
Short circuit capability 5μs
Offering T
j(max)
Packaged with and without freewheeling diode for increased design freedom
Low switching and conduction losses
Very good EMI behavior
Can be used with a small gate resistor for reduced delay time and voltage overshoot
High current density
Best-in-class 600 V IGBT efficiency and EMI behavior

Category	Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs	Series	TrenchStop®
IGBT Type	Trench Field Stop	Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	40 A	Current - Collector Pulsed (Icm)	80 A
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 20A	Power - Max	170 W
Switching Energy	690µJ	Input Type	Standard
Gate Charge	120 nC	Td (on/off) @ 25°C	16ns/194ns
Test Condition	400V, 20A, 14.6Ohm, 15V	Reverse Recovery Time (trr)	112 ns
Operating Temperature	-40°C ~ 175°C (TJ)	Mounting Type	Through Hole
Base Product Number	IKP20N60	RHoS	yes
PBFree	yes	HalogenFree	yes
Product Category	IGBT Transistors	Technology	Si
Maximum Gate Emitter Voltage	- 20 V, 20 V	Product Type	IGBT Transistors
Subcategory	IGBTs	Tradename	TRENCHSTOP
Part # Aliases	IKP20N60H3 SP000852236