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See Technical Specifications

IHW30N160R2

0A current rating, TO-247 package

Manufacturer:

Infineon
Mfr.Part #:

IHW30N160R2
Datasheet:

IHW30N160R2 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

1.6 kV
EDA/CAD Models:

Request Free CAD Models for IHW30N160R2

Email: [email protected]

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Tel: +852 95804164

IHW30N160R2 General Description

The IHW30N160R2 is a high performance, fast-switching IGBT (insulated gate bipolar transistor) module designed for a wide range of industrial applications. It has a voltage rating of 1600V and a current rating of 30A, making it ideal for high power switching applications. The module features a compact and robust design, with a weight of 155g and dimensions of 62mm x 28mm x 7mm. It has low on-state voltage drop and low switching losses, allowing for efficient operation and reduced power dissipation.The IHW30N160R2 has a built-in temperature sensor for monitoring the module's temperature and ensuring safe operation under varying conditions. It also has integrated gate resistors for simplified drive circuitry and improved compatibility with common gate drivers.With its high power handling capabilities, fast switching speed, and reliable performance, the IHW30N160R2 is well-suited for a variety of applications such as motor control, power supplies, industrial inverters, and UPS systems. Its high efficiency and robust construction make it a versatile and cost-effective solution for demanding industrial environments

Key Features

Current rating of 30A
Voltage rating of 1600V
High power density
Low VCE(sat)
High switching frequency capability
Low EMI
RoHS compliant
Compact size
High efficiency
Integrated diode

Application

Switch mode power supplies
Motor drives
Induction heating
Uninterruptible power supplies (UPS)
Wind turbine generators
Solar inverters
Electric vehicle charging stations
Welding equipment
Battery management systems
Regenerative energy systems

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	1.6 kV	Collector-Emitter Saturation Voltage	1.8 V
Maximum Gate Emitter Voltage	- 20 V, 20 V	Continuous Collector Current at 25 C	60 A
Pd - Power Dissipation	312 W	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 175 C	Series	600V TRENCHSTOP
Gate-Emitter Leakage Current	100 nA	Height	20.95 mm
Length	15.9 mm	Product Type	IGBT Transistors
Factory Pack Quantity	240	Subcategory	IGBTs
Tradename	TRENCHSTOP	Width	5.3 mm
Part # Aliases	SP000273701 IHW3N16R2XK IHW30N160R2FKSA1	Unit Weight	1.340411 oz

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Packing

AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

Warranty

365-Day Product

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We promise to provide 365 days quality assurance service for all our products.

Ratings and Reviews

M**n 01/23/2023

Good product, excellent seller-recommend! Item according to the description, shipping about 40 days, without tracking. The whole batch did not check and did not recalculate, but selectively taken leds work, the brightness is good. I recommend the seller!