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IGW03N120H2FKSA1

IGBT Transistors INDUSTRY 14

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IGW03N120H2FKSA1 General Description

IGBT 1200 V 9.6 A 62.5 W Through Hole PG-TO247-3-1

Infineon Technologies Corporation Inventory
Infineon Technologies Corporation Original Stock

Specifications

Category Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs Series -
IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 9.6 A Current - Collector Pulsed (Icm) 9.9 A
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 3A Power - Max 62.5 W
Switching Energy 290µJ Input Type Standard
Gate Charge 22 nC Td (on/off) @ 25°C 9.2ns/281ns
Test Condition 800V, 3A, 82Ohm, 15V Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Through Hole Base Product Number IGW03N
place Austria launch_date Mar 11, 2003
last_inspection_date 15 OCT 2022 supplier_cage_code C6489
htsusa 8541290095 schedule_b 8541290080
ppap False aec False

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Availability: 7976 PCS

+BOM
Qty. Unit Price Ext. Price
1+ $6.076 $6.08
200+ $2.352 $470.40
500+ $2.270 $1,135.00
1000+ $2.229 $2,229.00

The prices below are for reference only.

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