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IGP10N60TXKSA1

IGBT NPT, Trench Field Stop 600 V 20 A 110 W Through Hole PG-TO220-3-1

IGP10N60TXKSA1 General Description

IGBT NPT, Trench Field Stop 600 V 20 A 110 W Through Hole PG-TO220-3-1

Infineon Technologies CorporationMicrosoft.AspNetCore.Mvc.Localization.LocalizedHtmlString

Key Features

  • Lowest V
  • CEsat
  • Low switching losses
  • Easy parallel switching capability due to positive temperature coefficient in V
  • CEsat
  • Very soft, fast recovery anti-parallel Emitter Controlled Diode
  • High ruggedness, temperature stable behavior
  • Low EMI emissions
  • Low gate charge
  • Very tight parameter distribution
  • Highest efficiency – low conduction and switching losses
  • Comprehensive portfolio in 600 V and 1200 V for flexibility of design
  • High device reliability
Infineon Technologies CorporationMicrosoft.AspNetCore.Mvc.Localization.LocalizedHtmlString

Specifications

RHoS yes PBFree yes
HalogenFree yes

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Packing

AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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IGP10N60TXKSA1 Datasheet PDF

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