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IAUT300N08S5N012ATMA2

INFINEON - IAUT300N08S5N012ATMA2 - MOSFET, AEC-Q101, N-CH, 80V, HSOF

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

IAUT300N08S5N012ATMA2
Datasheet:

IAUT300N08S5N012ATMA2 Datasheet (PDF)
Series:

OptiMOS™
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

80 V
EDA/CAD Models:

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IAUT300N08S5N012ATMA2 General Description

MOSFET, AEC-Q101, N-CH, 80V, HSOF; Transistor Polarity: N Channel; Continuous Drain Current Id: 300A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.001ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 375W; Transistor Case Style: HSOF; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Infineon Technologies Corporation Inventory

Key Features

N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)
Ultra low Rds(on)
100% Avalanche tested

Infineon Technologies Corporation Original Stock

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	OptiMOS™
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V	Current - Continuous Drain (Id) @ 25°C	300A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V	Rds On (Max) @ Id, Vgs	1.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.8V @ 275µA	Gate Charge (Qg) (Max) @ Vgs	231 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	16250 pF @ 40 V
FET Feature	-	Power Dissipation (Max)	375W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	IAUT300	RHoS	yes
PBFree	yes	HalogenFree	yes