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IAUT260N10S5N019ATMA1 +BOM
IAUT260Nxx Series 100 V 1.9 mOhm 260 A OptiMOS-5 Power-Transistor-PG-HSOF-8-1
HSOF-8-
Manufacturer:
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Mfr.Part #:
IAUT260N10S5N019ATMA1
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Datasheet:
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Series:
OptiMOS™-5
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
100 V
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EDA/CAD Models:
Availability: 3525 PCS
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IAUT260N10S5N019ATMA1 General Description
Mosfet, N-Ch, 100V, 260A, Hsof; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:260A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IAUT260N10S5N019ATMA1
Key Features
- N-channel - Enhancement mode
- AEC qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green product (RoHS compliant)
- Ultra low Rds(on)
- 100% Avalanche tested
Specifications
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | Series | OptiMOS™-5 |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V | Current - Continuous Drain (Id) @ 25°C | 260A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | Rds On (Max) @ Id, Vgs | 1.9mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id | 3.8V @ 210µA | Gate Charge (Qg) (Max) @ Vgs | 166 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 11830 pF @ 50 V |
FET Feature | - | Power Dissipation (Max) | 300W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | IAUT260 | RHoS | yes |
PBFree | yes | HalogenFree | yes |
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IAUT260N10S5N019ATMA1 Datasheet PDF
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In Stock: 3,525
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
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1+ | - | - |
The prices below are for reference only.
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18 days delivery to bashkiria. 10 pieces. checked on gm328a-workers, but in the scheme did not insert and in working mode has not tried.