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IAUT150N10S5N035ATMA1

OptiMOS-5 Power Transistor MOSFET N-Channel 100V 150A 8-Pin PG-HSOF-1 T/R

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

IAUT150N10S5N035ATMA1
Datasheet:

IAUT150N10S5N035ATMA1 Datasheet (PDF)
Series:

OptiMOS™-5
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

100 V
EDA/CAD Models:

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Tel: +852 95804164

IAUT150N10S5N035ATMA1 General Description

Mosfet, Aec-Q101, N-Ch, 100V, Hsof; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.003Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IAUT150N10S5N035ATMA1

Infineon Technologies Corporation Inventory

Key Features

N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)
Ultra low Rds(on)
100% Avalanche tested

Infineon Technologies Corporation Original Stock

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	OptiMOS™-5
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V	Rds On (Max) @ Id, Vgs	3.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id	3.8V @ 110µA	Gate Charge (Qg) (Max) @ Vgs	87 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	6110 pF @ 50 V
FET Feature	-	Power Dissipation (Max)	166W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	IAUT150	RHoS	yes
PBFree	yes	HalogenFree	yes
Product Category	MOSFET	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	100 V	Id - Continuous Drain Current	150 A
Rds On - Drain-Source Resistance	3.5 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2.2 V	Qg - Gate Charge	67 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	166 W	Channel Mode	Enhancement
Qualification	AEC-Q101	Configuration	Single
Fall Time	26 ns	Product Type	MOSFET
Rise Time	7 ns	Factory Pack Quantity	2000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	23 ns	Typical Turn-On Delay Time	12 ns
Part # Aliases	IAUT150N10S5N035 SP001416126	Unit Weight	0.027197 oz