Payment Method
IAUC60N04S6N031HATMA1 +BOM
Mosfet Array 40V 60A (Tj) 75W (Tc) Surface Mount PG-TDSON-8-56
TDSON-8-
Manufacturer:
-
Mfr.Part #:
IAUC60N04S6N031HATMA1
-
Datasheet:
-
Series:
Automotive, AEC-Q101, OptiMOS™
-
Technology:
MOSFET (Metal Oxide)
-
Configuration:
2 N-Channel (Half Bridge)
-
Drain To Source Voltage (Vdss):
40V
-
EDA/CAD Models:
Availability: 6895 PCS
Please fill in the short form below and we will provide you the quotation immediately.
IAUC60N04S6N031HATMA1 General Description
Mosfet Array 40V 60A (Tj) 75W (Tc) Surface Mount PG-TDSON-8-56
Key Features
- Integrated half bridge SSO8 (5x6)
- 5x6 mm
- 2
- Latest OptiMOS6 40V optimized for switching & power losses
- Package JEDEC listed
- Cost efficiency for low & mid power drive apps
- Cu-clip soldered
- Enhanced routing for bridge applications results in sizably reduced PCB area
- Optimized for OptiMOS6
- R
- DS(ON)
- Increased datasheet current rating of 60A
Application
- Motor control
- Window lift
- BCM (Body Control Module)
- Parking brake
- Seat control module
Specifications
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsFET, MOSFET Arrays | Series | Automotive, AEC-Q101, OptiMOS™ |
Technology | MOSFET (Metal Oxide) | Configuration | 2 N-Channel (Half Bridge) |
FET Feature | - | Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tj) | Rds On (Max) @ Id, Vgs | 3.1mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | 3V @ 25µA | Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1922pF @ 25V | Power - Max | 75W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | IAUC60 | RHoS | yes |
PBFree | yes | HalogenFree | yes |
Product Category | MOSFET | Mounting Style | SMD/SMT |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 40 V | Id - Continuous Drain Current | 113 A |
Rds On - Drain-Source Resistance | 3.1 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 3 V | Qg - Gate Charge | 23 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 75 W | Channel Mode | Enhancement |
Tradename | OptiMOS | Fall Time | 5 ns |
Product Type | MOSFET | Rise Time | 2 ns |
Factory Pack Quantity | 5000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 10 ns |
Typical Turn-On Delay Time | 5 ns | Part # Aliases | IAUC60N04S6N031H SP003863382 |
Service Policies and Others
After-Sales & Settlement Related
For alternative payment channels, please reach out to us at:
[email protected]Shipping Method
AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
365-Day Product
Quality Guarantee
We promise to provide 365 days quality assurance service for all our products.
IAUC60N04S6N031HATMA1 Datasheet PDF
IAUC60N04S6N031HATMA1 PDF Preview
In Stock: 6,895
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | - | - |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for IAUC60N04S6N031HATMA1, guaranteed quotes back within 12hr.