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See Technical Specifications

IAUC45N04S6N070H

Power Field-Effect Transistor,

Manufacturer:

Infineon Technologies AG
Mfr.Part #:

IAUC45N04S6N070H
Datasheet:

IAUC45N04S6N070H Datasheet (PDF)
Operating Temperature max:

175.0 °C
Operating Temperature min:

-55.0 °C
Qualification:

Automotive
VDS max:

40.0 V
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IAUC45N04S6N070H General Description

The dual SSO8 5x6 mm2 package is perfectly suitable for single loads. For bridge applications the routing with a dual MOSFET is complicated and requires a large PCB area. Additionally, current rating in the dual SSO8 packages are limited to 20A. Using the integrated half-bridge, the PCB area is sizably reduced, as it provides enhanced routing for bridge applications. The newly designed half-bridge is based on the optimized OptiMOS™6 technology. The portfolio provides a wide RDS(ON) range from 3.0 mΩ to 7.0 mΩ and increased datasheet current rating of 60A.

Specifications

Operating Temperature max	175.0 °C	Operating Temperature min	-55.0 °C
Qualification	Automotive	VDS max	40.0 V
VGS(th) min	2.2 V	QG max	9.0 nC
RDS (on) max	7.0 mΩ	VGS(th) max	3.0 V
ID max	45.0 A	Technology	OptiMOS™-6
Polarity	N