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See Technical Specifications

HMC7950LS6

2 GHz to 28 GHz, GaAs pHEMT MMIC Low Noise Amplifier

Manufacturer:

Analog Devices, Inc
Mfr.Part #:

HMC7950LS6
Datasheet:

HMC7950LS6 Datasheet (PDF)
packingQty:

Cut Tape,500
packingOption:

Cut Tape
tempRange:

-40 to 85C
Mounting Style:

SMD/SMT
EDA/CAD Models:

Request Free CAD Models for HMC7950LS6

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HMC7950LS6 General Description

The HMC7950 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC). The HMC7950 is a wideband low noise amplifier that operates between 2 GHz and 28 GHz. The amplifier typically provides 15 dB of gain, 2.0 dB of noise figure, 26 dBm of output IP3, and 16 dBm of output power for 1 dB gain compression, requiring 64 mA from a 5 V supply. The HMC7950 is self biased with only a single positive supply needed to achieve a drain current, IDD, of 64 mA. The HMC7950 also has a gain control option, VGG2. The HMC7950 amplifier input/outputs are internally matched to 50 Ω and dc blocked. It comes in a 6 mm × 6 mm, 16-terminal LCC SMT ceramic package that is easy to handle and assemble.

Key Features

Output power for 1 dB compression (P1dB): 16 dBm typical
Saturated output power (PSAT): 19.5 dBm typical
Gain: 15 dB typical
Noise figure: 2.0 dB typical
Output third-order intercept (IP3): 26 dBm typical
Supply voltage: 5 V at 64 mA
50 Ω matched input/output

Application

Frequency Synthesizers: In RF and microwave synthesizers, VCOs are often used as tunable signal sources for frequency generation.
Phase-Locked Loops (PLLs): VCOs are a key component in PLLs for generating stable reference frequencies.
RF Communication Systems: Used in wireless communication systems, cellular base stations, and transceivers for generating carrier frequencies.
Radar Systems: In radar systems for target detection, tracking, and imaging.
Test and Measurement Equipment: VCOs are used in signal generators and test equipment for signal generation and testing purposes.
Wireless Backhaul: In point-to-point and point-to-multipoint wireless backhaul links for high-frequency signal generation.
Satellite Communication: Used in satellite transponders for signal generation and modulation.
Microwave and Millimeter-Wave Applications: In applications operating in the microwave and millimeter-wave frequency bands.

Specifications

model	HMC7950LS6	packingQty	Cut Tape,500
packingOption	Cut Tape	lifeCycle	production
tempRange	-40 to 85C	Product Category	RF Amplifier
Mounting Style	SMD/SMT	Type	Low Noise Amplifiers
Technology	GaAs	Operating Frequency	2 GHz to 28 GHz
P1dB - Compression Point	14.5 dBm	Gain	16.5 dB
Operating Supply Voltage	3 V to 7 V	NF - Noise Figure	2.8 dB
OIP3 - Third Order Intercept	24 dBm	Operating Supply Current	64 mA
Minimum Operating Temperature	- 40 C	Maximum Operating Temperature	+ 85 C
Series	HMC7950	Development Kit	EV1HMC7950LS6
Input Return Loss	19 dB	Moisture Sensitive	Yes
Number of Channels	1 Channel	Pd - Power Dissipation	1.55 W
Product Type	RF Amplifier	Factory Pack Quantity	500
Subcategory	Wireless & RF Integrated Circuits	Test Frequency	18 GHz to 28 GHz
Unit Weight	0.004762 oz